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magnetoresistive component

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  • Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol …   Wikipedia

  • Spin (physics) — This article is about spin in quantum mechanics. For rotation in classical mechanics, see angular momentum. In quantum mechanics and particle physics, spin is a fundamental characteristic property of elementary particles, composite particles… …   Wikipedia

  • Opto-isolator — This article is about the electronic component. For the optical component, see optical isolator. Schematic diagram of an opto isolator showing source of light (LED) on the left, dielectric barrier in the center, and sensor (phototransistor) on… …   Wikipedia

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  • Magnetoresistance — is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. The effect was first discovered by William Thomson (more commonly known as Lord Kelvin) in 1856, but he was unable to …   Wikipedia

  • Radiation hardening — is a method of designing and testing electronic components and systems to make them resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high energy electromagnetic radiation),[1] such as would be encountered… …   Wikipedia

  • Ruthenium — (pronEng|ruːˈθiːniəm) is a chemical element that has the symbol Ru and atomic number 44. A rare transition metal of the platinum group of the periodic table, ruthenium is found associated with platinum ores and used as a catalyst in some platinum …   Wikipedia

  • Tunnel magnetoresistance — Magnetic tunnel junction (schematic) The Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in magnetic tunnel junctions (MTJs). This is a component consisting of two ferromagnets separated by a thin insulator. If the… …   Wikipedia

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